Ferroelectric Oxides for Energy and Memory Devices (FOXEM)
Ferroelectric Oxides for Energy and Memory Devices (FOXEM)
Ferroelectric oxide films for energy and memory devices group (FOXEM) aims to develop high quality new ferroelectric materials compatible with industry to study their properties from a fundamental to a device level. Electronics Industry is facing several bottlenecks to sustain the increasing demand and necessity of new data storage, computation and communication devices. New materials are needed and CMOS-compatible ferroelectrics based in HfO2 are in the spotlight.